Επιπλέον πληροφορίες
Είδος εξαρτήματος | Transistor |
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Χαρακτηριστικά
Type Designator: 2SA1302.
Material of Transistor: Si.
Polarity: PNP.
Maximum Collector Power Dissipation (Pc): 150 W.
Maximum Collector-Base Voltage |Vcb|: 200 V.
Maximum Collector-Emitter Voltage |Vce|: 200 V.
Maximum Emitter-Base Voltage |Veb|: 5 V.
Maximum Collector Current |Ic max|: 15 A.
Max. Operating Junction Temperature (Tj): 150 °C.
Transition Frequency (ft): 30 MHz.
Collector Capacitance (Cc): 470 pF.
Forward Current Transfer Ratio (hFE), MIN: 55.
Package: X104-1.
6,50 €
Μη διαθέσιμο
Είδος εξαρτήματος | Transistor |
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