Transistor PNP 2SB 367

Χαρακτηριστικά
Type Designator: 2SB367.
Material of Transistor: Ge.
Polarity: PNP.
Maximum Collector Power Dissipation (Pc): 4 W.
Maximum Collector-Base Voltage |Vcb|: 25 V.
Maximum Collector-Emitter Voltage |Vce|: 20 V.
Maximum Emitter-Base Voltage |Veb|: 12 V.
Maximum Collector Current |Ic max|: 1 A.
Max. Operating Junction Temperature (Tj): 85 °C.
Forward Current Transfer Ratio (hFE), MIN: 100.
Package: TO3.