Transistor PNP 2SB 755

Χαρακτηριστικά
Type Designator: 2SB755.
Material of Transistor: Si.
Polarity: PNP.
Maximum Collector Power Dissipation (Pc): 120 W.
Maximum Collector-Base Voltage |Vcb|: 150 V.
Maximum Collector-Emitter Voltage |Vce|: 150 V.
Maximum Emitter-Base Voltage |Veb|: 5 V.
Maximum Collector Current |Ic max|: 12 A.
Max. Operating Junction Temperature (Tj): 175 °C.
Transition Frequency (ft): 10 MHz.
Collector Capacitance (Cc): 450 pF.
Forward Current Transfer Ratio (hFE), MIN: 55.
Package: XM20.