Transistor PNP 2SB 1185

Χαρακτηριστικά
Type Designator: 2SB1185.
Material of Transistor: Si.
Polarity: PNP.
Maximum Collector Power Dissipation (Pc): 25 W.
Maximum Collector-Base Voltage |Vcb|: 60 V.
Maximum Collector-Emitter Voltage |Vce|: 60 V.
Maximum Emitter-Base Voltage |Veb|: 5 V.
Maximum Collector Current |Ic max|: 3 A.
Max. Operating Junction Temperature (Tj): 175 °C.
Transition Frequency (ft): 35 MHz.
Forward Current Transfer Ratio (hFE), MIN: 90.
Package: TO220.