Transistor PNP 2SB 1166

Χαρακτηριστικά
Type Designator: 2SB1166.
Material of Transistor: Si.
Polarity: PNP.
Maximum Collector Power Dissipation (Pc): 20 W.
Maximum Collector-Base Voltage |Vcb|: 60 V.
Maximum Collector-Emitter Voltage |Vce|: 50 V.
Maximum Emitter-Base Voltage |Veb|: 6 V.
Maximum Collector Current |Ic max|: 8 A.
Max. Operating Junction Temperature (Tj): 150 °C.
Transition Frequency (ft): 130 MHz.
Collector Capacitance (Cc): 95 pF.
Forward Current Transfer Ratio (hFE), MIN: 70.
Package: TO126.