Transistor NPN 2SD 1406

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Type Designator: 2SD1406.
Material of Transistor: Si.
Polarity: NPN.
Maximum Collector Power Dissipation (Pc): 25 W.
Maximum Collector-Base Voltage |Vcb|: 60 V.
Maximum Collector-Emitter Voltage |Vce|: 60 V.
Maximum Emitter-Base Voltage |Veb|: 7 V.
Maximum Collector Current |Ic max|: 3 A.
Max. Operating Junction Temperature (Tj): 150 °C.
Transition Frequency (ft): 3 MHz.
Collector Capacitance (Cc): 70 pF.
Forward Current Transfer Ratio (hFE), MIN: 60.
Package: ISO220.