Transistor NPN 2SD 965

Χαρακτηριστικά
Type Designator: 2SD965.
Material of Transistor: Si.
Polarity: NPN.
Maximum Collector Power Dissipation (Pc): 0.75 W.
Maximum Collector-Base Voltage |Vcb|: 40 V.
Maximum Collector-Emitter Voltage |Vce|: 20 V.
Maximum Emitter-Base Voltage |Veb|: 7 V.
Maximum Collector Current |Ic max|: 5 A.
Max. Operating Junction Temperature (Tj): 150 °C.
Transition Frequency (ft): 75 MHz.
Collector Capacitance (Cc): 30 pF.
Forward Current Transfer Ratio (hFE), MIN: 180.
Package: TO92.