Transistor NPN 2SD 649

Χαρακτηριστικά
Type Designator: 2SD649.
Material of Transistor: Si.
Polarity: NPN.
Maximum Collector Power Dissipation (Pc): 80 W.
Maximum Collector-Base Voltage |Vcb|: 1500 V.
Maximum Collector-Emitter Voltage |Vce|: 600 V.
Maximum Emitter-Base Voltage |Veb|: 7 V.
Maximum Collector Current |Ic max|: 6 A.
Max. Operating Junction Temperature (Tj): 125 °C.
Forward Current Transfer Ratio (hFE), MIN: 4.
Package: TO3.