Επιπλέον πληροφορίες
Είδος εξαρτήματος | Transistor |
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Χαρακτηριστικά
Type Designator: 2SD734.
Material of Transistor: Si.
Polarity: NPN.
Maximum Collector Power Dissipation (Pc): 0.6 W.
Maximum Collector-Base Voltage |Vcb|: 25 V.
Maximum Collector-Emitter Voltage |Vce|: 20 V.
Maximum Emitter-Base Voltage |Veb|: 5 V.
Maximum Collector Current |Ic max|: 0.7 A.
Max. Operating Junction Temperature (Tj): 125 °C.
Transition Frequency (ft): 250 MHz.
Collector Capacitance (Cc): 8 pF.
Forward Current Transfer Ratio (hFE), MIN: 60.
Package: TO92.
2,00 €
Σε απόθεμα
Είδος εξαρτήματος | Transistor |
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