Transistor NPN 2SD 1959

Χαρακτηριστικά
Type Designator: 2SD1959.
Material of Transistor: Si.
Polarity: NPN.
Maximum Collector Power Dissipation (Pc): 50 W.
Maximum Collector-Base Voltage |Vcb|: 1400 V.
Maximum Collector-Emitter Voltage |Vce|: 650 V.
Maximum Collector Current |Ic max|: 10 A.
Max. Operating Junction Temperature (Tj): 150 °C.
Forward Current Transfer Ratio (hFE), MIN: 8.
Package: TO218.