Transistor NPN 2SD 2012

Χαρακτηριστικά
Type Designator: 2SD2012.
Material of Transistor: Si.
Polarity: NPN.
Maximum Collector Power Dissipation (Pc): 25 W.
Maximum Collector-Base Voltage |Vcb|: 60 V.
Maximum Collector-Emitter Voltage |Vce|: 60 V.
Maximum Emitter-Base Voltage |Veb|: 7 V.
Maximum Collector Current |Ic max|: 3 A.
Max. Operating Junction Temperature (Tj): 150 °C.
Transition Frequency (ft): 9 MHz.
Forward Current Transfer Ratio (hFE), MIN: 100.
Package: TO220.