Transistor 2SK 556

Χαρακτηριστικά
Type Designator: 2SK556.
Type of Transistor: MOSFET.
Type of Control Channel: N -Channel.
Maximum Power Dissipation (Pd): 100 W.
Maximum Drain-Source Voltage |Vds|: 450 V.
Maximum Gate-Source Voltage |Vgs|: 20 V.
Maximum Drain Current |Id|: 12 A.
Maximum Junction Temperature (Tj): 150 °C.
Rise Time (tr): 85 nS.
Drain-Source Capacitance (Cd): 720 pF.
Maximum Drain-Source On-State Resistance (Rds): 0.55 Ohm.
Package: TO3P.