Transistor 2SK 1010

Χαρακτηριστικά
Type Designator: 2SK1010.
Type of Transistor: MOSFET.
Type of Control Channel: N -Channel.
Maximum Power Dissipation (Pd): 80 W.
Maximum Drain-Source Voltage |Vds|: 500 V.
Maximum Gate-Source Voltage |Vgs|: 30 V.
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V.
Maximum Drain Current |Id|: 6 A.
Maximum Junction Temperature (Tj): 150 °C.
Rise Time (tr): 50 nS.
Drain-Source Capacitance (Cd): 100 pF.
Maximum Drain-Source On-State Resistance (Rds): 1.6 Ohm.
Package: TO-220.