Transistor NPN BUT 11AX

Χαρακτηριστικά

Material of Transistor: Si.
Polarity: NPN.
Maximum Collector Power Dissipation (Pc): 20 W.
Maximum Collector-Base Voltage |Vcb|: 1000 V.
Maximum Collector-Emitter Voltage |Vce|: 450 V.
Maximum Emitter-Base Voltage |Veb|: 5 V.
Maximum Collector Current |Ic max|: 5 A.
Max. Operating Junction Temperature (Tj): 150 °C.
Forward Current Transfer Ratio (hFE), MIN: 10.