Mosfet IRFBC 30 N-Channel

Χαρακτηριστικά
Type of Transistor: MOSFET.
Type of Control Channel: N -Channel.
Maximum Power Dissipation (Pd): 74 W.
Maximum Drain-Source Voltage |Vds|: 600 V.
Maximum Gate-Source Voltage |Vgs|: 20 V.
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V.
Maximum Drain Current |Id|: 3.6 A.
Maximum Junction Temperature (Tj): 150 °C.
Total Gate Charge (Qg): 31(max) nC.
Rise Time (tr): 13 nS.
Drain-Source Capacitance (Cd): 86 pF.
Maximum Drain-Source On-State Resistance (Rds): 2.2 Ohm.
Package: TO220AB.