Mosfet IRFBC 40 N-Channel

Χαρακτηριστικά
Type of Transistor: MOSFET.
Type of Control Channel: N -Channel.
Maximum Power Dissipation (Pd): 125 W.
Maximum Drain-Source Voltage |Vds|: 600 V.
Maximum Gate-Source Voltage |Vgs|: 20 V.
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V.
Maximum Drain Current |Id|: 6.2 A.
Maximum Junction Temperature (Tj): 150 °C.
Total Gate Charge (Qg): 60(max) nC.
Rise Time (tr): 18 nS.
Drain-Source Capacitance (Cd): 160 pF.
Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm.
Package: TO220AB.