Transistor 2SK 1117

Χαρακτηριστικά
Type Designator: 2SK1117.
Type of Transistor: MOSFET.
Type of Control Channel: N -Channel.
Maximum Power Dissipation (Pd): 100 W.
Maximum Drain-Source Voltage |Vds|: 600 V.
Maximum Gate-Source Voltage |Vgs|: 20 V.
Maximum Drain Current |Id|: 6 A.
Maximum Junction Temperature (Tj): 150 °C.
Rise Time (tr): 25 nS.
Drain-Source Capacitance (Cd): 250 pF.
Maximum Drain-Source On-State Resistance (Rds): 0.95 Ohm.
Package: TO220AB.