Επιπλέον πληροφορίες
| Είδος εξαρτήματος | Transistor |
|---|
Transistor BD 829
Type Designator: BD829.
Material of Transistor: Si.
Polarity: NPN.
Maximum Collector Power Dissipation (Pc): 8 W.
Maximum Collector-Base Voltage |Vcb|: 100 V.
Maximum Collector-Emitter Voltage |Vce|: 80 V.
Maximum Emitter-Base Voltage |Veb|: 5 V.
Maximum Collector Current |Ic max|: 1 A.
Max. Operating Junction Temperature (Tj): 150 °C.
Transition Frequency (ft): 75 MHz.
Forward Current Transfer Ratio (hFE), MIN: 40.
Package: TO202.
1,80 €
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