Transistor BDW 51C

Χαρακτηριστικά
Material of Transistor: Si.
Polarity: NPN.
Maximum Collector Power Dissipation (Pc): 117 W.
Maximum Collector-Base Voltage |Vcb|: 100 V.
Maximum Collector-Emitter Voltage |Vce|: 100 V.
Maximum Emitter-Base Voltage |Veb|: 5 V.
Maximum Collector Current |Ic max|: 15 A.
Max. Operating Junction Temperature (Tj): 200 °C.
Transition Frequency (ft): 3 MHz.
Forward Current Transfer Ratio (hFE), MIN: 20.
Package: TO3.