Transistor BDW 83C

Χαρακτηριστικά
Material of Transistor: Si.
Polarity: NPN.
Maximum Collector Power Dissipation (Pc): 150 W.
Maximum Collector-Base Voltage |Vcb|: 100 V.
Maximum Collector-Emitter Voltage |Vce|: 100 V.
Maximum Emitter-Base Voltage |Veb|: 5 V.
Maximum Collector Current |Ic max|: 15 A.
Max. Operating Junction Temperature (Tj): 150 °C.
Transition Frequency (ft): 1 MHz.
Forward Current Transfer Ratio (hFE), MIN: 750.
Package: TO218.