Transistor NPN 2SC 2009

Χαρακτηριστικά
Type Designator: 2SC2009.
Material of Transistor: Si.
Polarity: NPN.
Maximum Collector Power Dissipation (Pc): 0.25 W.
Maximum Collector-Base Voltage |Vcb|: 35 V.
Maximum Collector-Emitter Voltage |Vce|: 35 V.
Maximum Emitter-Base Voltage |Veb|: 3 V.
Maximum Collector Current |Ic max|: 0.1 A.
Max. Operating Junction Temperature (Tj): 100 °C.
Transition Frequency (ft): 275 MHz.
Collector Capacitance (Cc): 2.8 pF.
Forward Current Transfer Ratio (hFE), MIN: 20.
Package: TO92.