Transistor NPN 2SD 1376

Χαρακτηριστικά
Type Designator: 2SD1376.
Material of Transistor: Si.
Polarity: NPN.
Maximum Collector Power Dissipation (Pc): 20 W.
Maximum Collector-Base Voltage |Vcb|: 120 V.
Maximum Collector-Emitter Voltage |Vce|: 120 V.
Maximum Emitter-Base Voltage |Veb|: 7 V.
Maximum Collector Current |Ic max|: 1.5 A.
Max. Operating Junction Temperature (Tj): 150 °C.
Forward Current Transfer Ratio (hFE), MIN: 15000.
Package: TO126.