Transistor NPN 2SD 1407

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Type Designator: 2SD1407.
Material of Transistor: Si.
Polarity: NPN.
Maximum Collector Power Dissipation (Pc): 30 W.
Maximum Collector-Base Voltage |Vcb|: 100 V.
Maximum Collector-Emitter Voltage |Vce|: 100 V.
Maximum Emitter-Base Voltage |Veb|: 5 V.
Maximum Collector Current |Ic max|: 5 A.
Max. Operating Junction Temperature (Tj): 150 °C.
Transition Frequency (ft): 12 MHz.
Collector Capacitance (Cc): 100 pF.
Forward Current Transfer Ratio (hFE), MIN: 40.
Package: ISO220.