Transistor NPN 2SD 1609

Χαρακτηριστικά
Type Designator: 2SD1609.
Material of Transistor: Si.
Polarity: NPN.
Maximum Collector Power Dissipation (Pc): 1.25 W.
Maximum Collector-Base Voltage |Vcb|: 160 V.
Maximum Collector-Emitter Voltage |Vce|: 160 V.
Maximum Emitter-Base Voltage |Veb|: 5 V.
Maximum Collector Current |Ic max|: 0.1 A.
Max. Operating Junction Temperature (Tj): 150 °C.
Transition Frequency (ft): 140 MHz.
Collector Capacitance (Cc): 3.8 pF.
Forward Current Transfer Ratio (hFE), MIN: 60.
Package: TO126.