Transistor NPN 2SD 1650

Χαρακτηριστικά
Type Designator: 2SD1650.
Material of Transistor: Si.
Polarity: NPN.
Maximum Collector Power Dissipation (Pc): 50 W.
Maximum Collector-Base Voltage |Vcb|: 1500 V.
Maximum Collector-Emitter Voltage |Vce|: 800 V.
Maximum Emitter-Base Voltage |Veb|: 6 V.
Maximum Collector Current |Ic max|: 3.5 A.
Max. Operating Junction Temperature (Tj): 150 °C.
Transition Frequency (ft): 3 MHz.
Forward Current Transfer Ratio (hFE), MIN: 8.
Package: ISO247.