Transistor NPN 2SD 560

Χαρακτηριστικά
Type Designator: 2SD560.
Material of Transistor: Si.
Polarity: NPN.
Maximum Collector Power Dissipation (Pc): 30 W.
Maximum Collector-Base Voltage |Vcb|: 150 V..
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 7 V.
Maximum Collector Current |Ic max|: 5 A.
Max. Operating Junction Temperature (Tj): 175 °C.
Forward Current Transfer Ratio (hFE), MIN: 3000.
Package: TO220.