Transistor NPN 2SD 636

Χαρακτηριστικά
Type Designator: 2SD636.
Material of Transistor: Si.
Polarity: NPN.
Maximum Collector Power Dissipation (Pc): 0.4 W.
Maximum Collector-Base Voltage |Vcb|: 30 V.
Maximum Collector-Emitter Voltage |Vce|: 25 V.
Maximum Emitter-Base Voltage |Veb|: 7 V.
Maximum Collector Current |Ic max|: 0.1 A.
Max. Operating Junction Temperature (Tj): 135 °C.
Transition Frequency (ft): 75 MHz.
Collector Capacitance (Cc): 3.5 pF.
Forward Current Transfer Ratio (hFE), MIN: 90.
Package: X73.