Transistor NPN 2SD 638

Χαρακτηριστικά
Type Designator: 2SD638.
Material of Transistor: Si.
Polarity: NPN.
Maximum Collector Power Dissipation (Pc): 0.6 W.
Maximum Collector-Base Voltage |Vcb|: 30 V.
Maximum Collector-Emitter Voltage |Vce|: 25 V.
Maximum Emitter-Base Voltage |Veb|: 7 V.
Maximum Collector Current |Ic max|: 0.5 A.
Max. Operating Junction Temperature (Tj): 135 °C.
Transition Frequency (ft): 100 MHz.
Collector Capacitance (Cc): 6 pF.
Forward Current Transfer Ratio (hFE), MIN: 60.
Package: X73.