Transistor NPN 2SD 809

Χαρακτηριστικά
Type Designator: 2SD809.
Material of Transistor: Si.
Polarity: NPN.
Maximum Collector Power Dissipation (Pc): 10 W.
Maximum Collector-Base Voltage |Vcb|: 100 V.
Maximum Emitter-Base Voltage |Veb|: 6 V.
Maximum Collector Current |Ic max|: 1 A.
Max. Operating Junction Temperature (Tj): 150 °C.
Transition Frequency (ft): 85 MHz.
Collector Capacitance (Cc): 15 pF.
Forward Current Transfer Ratio (hFE), MIN: 250.
Package: TO126.