Transistor PNP 2SA 1108

Χαρακτηριστικά
Type of Transistor: BJT.
Type Designator: 2SA1108.
Material of Transistor: Si.
Polarity: PNP.
Maximum Collector Power Dissipation: 120 W.
Maximum Collector-Base Voltage: 130 V.
Maximum Collector-Emitter Voltage: 130 V.
Maximum Emitter-Base Voltage: 5 V.
Maximum Collector Current: 12 A.
Maximum Operating Junction Temperature: 135 °C.
Transition Frequency: 60 MHz.
Forward Current Transfer Ratio (hFE Value): 150.
Collector Capacitance: 270 pF.
Package: XM20.