Transistor PNP 2SB 1010

Χαρακτηριστικά
Type Designator: 2SB1010.
Material of Transistor: Si.
Polarity: PNP.
Maximum Collector Power Dissipation (Pc): 0.75 W.
Maximum Collector-Base Voltage |Vcb|: 40 V.
Maximum Collector-Emitter Voltage |Vce|: 40 V.
Maximum Emitter-Base Voltage |Veb|: 9 V.
Maximum Collector Current |Ic max|: 2 A.
Max. Operating Junction Temperature (Tj): 185 °C.
Transition Frequency (ft): 50 MHz.
Forward Current Transfer Ratio (hFE), MIN: 140.
Package: TO92.