Transistor PNP 2SB 175

Χαρακτηριστικά
Type Designator: 2SB175.
Material of Transistor: Ge.
Polarity: PNP.
Maximum Collector Power Dissipation (Pc): 0.125 W.
Maximum Collector-Base Voltage |Vcb|: 30 V.
Maximum Emitter-Base Voltage |Veb|: 6 V.
Maximum Collector Current |Ic max|: 0.1 A.
Max. Operating Junction Temperature (Tj): 85 °C.
Transition Frequency (ft): 0.7 MHz.
Forward Current Transfer Ratio (hFE), MIN: 55.
Package: TO1.