Transistor PNP 2SB 560

Χαρακτηριστικά
Type Designator: 2SB560.
Material of Transistor: Si.
Polarity: PNP.
Maximum Collector Power Dissipation (Pc): 0.75 W.
Maximum Collector-Base Voltage |Vcb|: 100 V.
Maximum Collector-Emitter Voltage |Vce|: 80 V.
Maximum Emitter-Base Voltage |Veb|: 5 V.
Maximum Collector Current |Ic max|: 0.7 A.
Max. Operating Junction Temperature (Tj): 125 °C.
Transition Frequency (ft): 50 MHz.
Collector Capacitance (Cc): 30 pF.
Forward Current Transfer Ratio (hFE), MIN: 60.
Package: TO92.