Transistor PNP 2SB 605

Χαρακτηριστικά
Type Designator: 2SB605.
Material of Transistor: Si.
Polarity: PNP.
Maximum Collector Power Dissipation (Pc): 0.8 W.
Maximum Collector-Base Voltage |Vcb|: 60 V.
Maximum Collector-Emitter Voltage |Vce|: 50 V.
Maximum Emitter-Base Voltage |Veb|: 5 V.
Maximum Collector Current |Ic max|: 0.7 A.
Max. Operating Junction Temperature (Tj): 175 °C.
Transition Frequency (ft): 60 MHz.
Forward Current Transfer Ratio (hFE), MIN: 90.
Package: SP10.