Transistor PNP 2SB 632

Χαρακτηριστικά
Type Designator: 2SB632.
Material of Transistor: Si.
Polarity: PNP.
Maximum Collector Power Dissipation (Pc): 10 W.
Maximum Collector-Base Voltage |Vcb|: 25 V.
Maximum Collector-Emitter Voltage |Vce|: 25 V.
Maximum Emitter-Base Voltage |Veb|: 5 V.
Maximum Collector Current |Ic max|: 2 A.
Max. Operating Junction Temperature (Tj): 150 °C.
Transition Frequency (ft): 50 MHz.
Collector Capacitance (Cc): 90 pF.
Forward Current Transfer Ratio (hFE), MIN: 60.
Package: TO126.