Transistor PNP 2SB 817

Χαρακτηριστικά
Type Designator: 2SB817.
Material of Transistor: Si.
Polarity: PNP.
Maximum Collector Power Dissipation (Pc): 100 W.
Maximum Collector-Base Voltage |Vcb|: 160 V.
Maximum Collector-Emitter Voltage |Vce|: 160 V.
Maximum Emitter-Base Voltage |Veb|: 6 V.
Maximum Collector Current |Ic max|: 12 A.
Max. Operating Junction Temperature (Tj): 150 °C.
Transition Frequency (ft): 7.5 MHz.
Collector Capacitance (Cc): 300 pF.
Forward Current Transfer Ratio (hFE), MIN: 60.
Package: TO220.