Transistor PNP 2SB 861

Χαρακτηριστικά
Type Designator: 2SB861.
Material of Transistor: Si.
Polarity: PNP.
Maximum Collector Power Dissipation (Pc): 30 W.
Maximum Collector-Base Voltage |Vcb|: 150 V.
Maximum Collector-Emitter Voltage |Vce|: 150 V.
Maximum Emitter-Base Voltage |Veb|: 6 V.
Maximum Collector Current |Ic max|: 2 A.
Max. Operating Junction Temperature (Tj): 150 °C.
Collector Capacitance (Cc): 30 pF.
Forward Current Transfer Ratio (hFE), MIN: 50.
Package: TO220.