Transistor 2SK 1081

Χαρακτηριστικά
Type Designator: 2SK1081.
Type of Transistor: MOSFET.
Type of Control Channel: N -Channel.
Maximum Power Dissipation (Pd): 125 W.
Maximum Drain-Source Voltage |Vds|: 800 V.
Maximum Gate-Source Voltage |Vgs|: 30 V.
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V.
Maximum Drain Current |Id|: 7 A.
Maximum Junction Temperature (Tj): 150 °C.
Rise Time (tr): 110 nS.
Drain-Source Capacitance (Cd): 140 pF.
Maximum Drain-Source On-State Resistance (Rds): 2.2 Ohm.
Package: TO-3PN.