Transistor BD 169

Χαρακτηριστικά
Material of Transistor: Si.
Polarity: NPN.
Maximum Collector Power Dissipation (Pc): 20 W.
Maximum Collector-Base Voltage |Vcb|: 80 V.
Maximum Collector-Emitter Voltage |Vce|: 80 V.
Maximum Emitter-Base Voltage |Veb|: 5 V.
Maximum Collector Current |Ic max|: 1.5 A.
Max. Operating Junction Temperature (Tj): 150 °C.
Transition Frequency (ft): 3 MHz.
Forward Current Transfer Ratio (hFE), MIN: 40.
Package: TO126.