Transistor NPN 2SC 509

Type Designator: 2SC509.
Material of Transistor: Si.
Polarity: NPN.
Maximum Collector Power Dissipation (Pc): 0.6 W.
Maximum Collector-Base Voltage |Vcb|: 35 V.
Maximum Collector-Emitter Voltage |Vce|: 30 V.
Maximum Emitter-Base Voltage |Veb|: 5 V.
Maximum Collector Current |Ic max|: 0.5 A.
Max. Operating Junction Temperature (Tj): 150 °C.
Transition Frequency (ft): 50 MHz.
Collector Capacitance (Cc): 30 pF.
Forward Current Transfer Ratio (hFE), MIN: 70.
Package: SOT33.