Transistor NPN 2SD 669

Χαρακτηριστικά
Type Designator: 2SD669.
Material of Transistor: Si.
Polarity: NPN.
Maximum Collector Power Dissipation (Pc): 1 W.
Maximum Collector-Base Voltage |Vcb|: 180 V.
Maximum Collector-Emitter Voltage |Vce|: 120 V.
Maximum Collector Current |Ic max|: 1.5 A.
Max. Operating Junction Temperature (Tj): 175 °C.
Transition Frequency (ft): 140 MHz.
Collector Capacitance (Cc): 14 pF.
Forward Current Transfer Ratio (hFE), MIN: 60.
Package: TO126.