Transistor NPN 2SD 836

Χαρακτηριστικά
Type Designator: 2SD836.
Material of Transistor: Si.
Polarity: NPN.
Maximum Collector Power Dissipation (Pc): 35 W.
Maximum Collector-Base Voltage |Vcb|: 60 V.
Maximum Collector-Emitter Voltage |Vce|: 60 V.
Maximum Emitter-Base Voltage |Veb|: 5 V.
Maximum Collector Current |Ic max|: 2 A.
Max. Operating Junction Temperature (Tj): 175 °C.
Forward Current Transfer Ratio (hFE), MIN: 6000.
Package: TO220.