Transistor PNP 2SB 1012

Χαρακτηριστικά
Type Designator: 2SB1012.
Material of Transistor: Si.
Polarity: PNP.
Maximum Collector Power Dissipation (Pc): 20 W.
Maximum Collector-Base Voltage |Vcb|: 120 V.
Maximum Collector-Emitter Voltage |Vce|: 120 V.
Maximum Emitter-Base Voltage |Veb|: 7 V.
Maximum Collector Current |Ic max|: 1.5 A.
Max. Operating Junction Temperature (Tj): 150 °C.
Forward Current Transfer Ratio (hFE), MIN: 2000.
Package: TO126.