Transistor PNP 2SB 600

Χαρακτηριστικά
Type Designator: 2SB600.
Material of Transistor: Si.
Polarity: PNP.
Maximum Collector Power Dissipation (Pc): 200 W.
Maximum Collector-Base Voltage |Vcb|: 200 V.
Maximum Collector-Emitter Voltage |Vce|: 200 V.
Maximum Emitter-Base Voltage |Veb|: 5 V.
Maximum Collector Current |Ic max|: 15 A.
Max. Operating Junction Temperature (Tj): 150 °C.
Transition Frequency (ft): 2 MHz.
Forward Current Transfer Ratio (hFE), MIN: 40.
Package: TO3.