Transistor PNP 2SB 810

Χαρακτηριστικά
Type Designator: 2SB810.
Material of Transistor: Si.
Polarity: PNP.
Maximum Collector Power Dissipation (Pc): 0.35 W.
Maximum Collector-Base Voltage |Vcb|: 30 V.
Maximum Emitter-Base Voltage |Veb|: 5 V.
Maximum Collector Current |Ic max|: 0.7 A.
Max. Operating Junction Temperature (Tj): 135 °C.
Transition Frequency (ft): 80 MHz.
Collector Capacitance (Cc): 17 pF.
Forward Current Transfer Ratio (hFE), MIN: 200.
Package: TO92.